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FP10R12W1T7B3BOMA1
FP10R12W1T7B3BOMA1
IGBT Modules FP10R12W1T7B3BOMA1
Infineon
FP10R12W1T7B3BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count20
AutomotiveNo
TechnologyTrench Stop
PCB changed20
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width33.8
Package Height12
Package Length48
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)10
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Module N-CH 1200V 10A 20-Pin Tray
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