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FP150R12KT4P_B11
FP150R12KT4P_B11
IGBT Modules FP150R12KT4P_B11
Infineon
FP150R12KT4P_B11
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 150A Tray
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