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IGBT Modules FP15R12KE3
Infineon
FP15R12KE3
--
Diodes, Transistors and Thyristors
IGBT Modules
FP15R12KE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveNo
PCB changed23
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width45.6
Package Height17
Package Length55.9
Supplier PackageEASY2-1
Maximum Power Dissipation (mW)89000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)27
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 27A 89000mW 23-Pin EASY2-1 Tray
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