Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FP200R12N3T7B11BPSA1
FP200R12N3T7B11BPSA1
IGBT Modules FP200R12N3T7B11BPSA1
Infineon
FP200R12N3T7B11BPSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
TechnologyTrench Stop
Part StatusActive
Channel TypeN
ConfigurationHex
Supplier Temperature GradeIndustrial
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 1200V 200A Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95594
Manufacturer: Microchip Technology
Inventory: 0
$0.69394
Manufacturer: Microchip Technology
Inventory: 4000
$2.45144
Manufacturer: STMicroelectronics
Inventory: 5880
$0.65282
Manufacturer: Texas Instruments
Inventory: 3000
$3.36064
Manufacturer: Texas Instruments
Inventory: 2500
$0.14403
Manufacturer: Texas Instruments
Inventory: 3000
$1.31707
Manufacturer: Texas Instruments
Inventory: 6000
$1.06215
Manufacturer: STMicroelectronics
Inventory: 1920
$3.5051
Manufacturer: ADI
Inventory: 0
$1.40075