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FP25R12U1T4BPSA1
FP25R12U1T4BPSA1
IGBT Modules FP25R12U1T4BPSA1
Infineon
FP25R12U1T4BPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusNRND
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)190000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)39
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 39A 190000mW Tray
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