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FP35R12W2T4
FP35R12W2T4
IGBT Modules FP35R12W2T4
Infineon
FP35R12W2T4
--
Diodes, Transistors and Thyristors
IGBT Modules
FP35R12W2T4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveNo
PCB changed23
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width62.8
Package Height12
Package Length56.7
Supplier PackageEASY2B-1
Standard Package NameEASY2B
Maximum Power Dissipation (mW)215000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)54
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-1 Tray
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