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FP50R12N2T7PBPSA1
FP50R12N2T7PBPSA1
IGBT Modules FP50R12N2T7PBPSA1
Infineon
FP50R12N2T7PBPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
TechnologyTrench Stop
Part StatusActive
Channel TypeN
ConfigurationHex
Supplier Temperature GradeIndustrial
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Module N-CH 1200V 50A Tray
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