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FP75R12KT3
FP75R12KT3
IGBT Modules FP75R12KT3
Infineon
FP75R12KT3
--
Diodes, Transistors and Thyristors
IGBT Modules
FP75R12KT3.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count24
AutomotiveUnknown
PCB changed24
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-3
Standard Package NameECONO 3
Maximum Power Dissipation (mW)355000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)105
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 105A 355000mW Automotive 24-Pin ECONO3-3 Tray
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