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FS150R12PT4
FS150R12PT4
IGBT Modules FS150R12PT4
Infineon
FS150R12PT4
--
Diodes, Transistors and Thyristors
IGBT Modules
FS150R12PT4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count20
AutomotiveNo
PCB changed20
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width103
Package Height17
Package Length130
Supplier PackageECONO4-1
Maximum Power Dissipation (mW)680
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 200A 680mW 20-Pin ECONO4-1 Tray
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