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FS225R12KE4BOSA1
FS225R12KE4BOSA1
IGBT Modules FS225R12KE4BOSA1
Infineon
FS225R12KE4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count29
AutomotiveUnknown
PCB changed29
Part StatusNRND
Channel TypeN
ConfigurationHex
Package Width150
Package Height17
Package Length162
Supplier PackageECONOPP-1
Maximum Power Dissipation (mW)1100000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)320
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 320A 1100000mW Automotive 29-Pin ECONOPP-1 Tray
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