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FS35R12W1T4BOMA1
FS35R12W1T4BOMA1
IGBT Modules FS35R12W1T4BOMA1
Infineon
FS35R12W1T4BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count18
AutomotiveNo
PCB changed18
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-1
Maximum Power Dissipation (mW)225000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)65
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 65A 225000mW 18-Pin EASY1B-1 Tray
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