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FS50R12N2T7B15BPSA2
FS50R12N2T7B15BPSA2
IGBT Modules FS50R12N2T7B15BPSA2
Infineon
FS50R12N2T7B15BPSA2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
TechnologyTrench Stop
Part StatusActive
Channel TypeN
ConfigurationHex
Supplier Temperature GradeIndustrial
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Module N-CH 1200V 50A Tray
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