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FS75R07W2E3B11ABOMA1
FS75R07W2E3B11ABOMA1
IGBT Modules FS75R07W2E3B11ABOMA1
Infineon
FS75R07W2E3B11ABOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count18
AutomotiveUnknown
PCB changed18
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width56.7
Package Height12
Package Length62.8
Supplier PackageEASY2B-3
Maximum Power Dissipation (mW)275000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)95
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 650V 95A 275000mW Automotive 18-Pin EASY2B-3 Tray
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