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FS800R07A2E3BOSA2
FS800R07A2E3BOSA2
IGBT Modules FS800R07A2E3BOSA2
Infineon
FS800R07A2E3BOSA2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count33
AutomotiveYes
PCB changed33
Part StatusObsolete
Channel TypeN
ConfigurationHex
Package Width97
Package Height20.5
Package Length106.5
Supplier PackageHYBRID2-1
Maximum Power Dissipation (mW)1500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)700
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 650V 700A 1500000mW Automotive 33-Pin HYBRID2-1 Tray
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