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FS800R07A2E3XZ
FS800R07A2E3XZ
IGBT Modules FS800R07A2E3XZ
Infineon
FS800R07A2E3XZ
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
Part StatusNRND
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)1500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)700
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 650V 700A 1500000mW Automotive 33-Pin HYBRID2-1 Tray
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