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FS820R08A6P2LBBPSA1
FS820R08A6P2LBBPSA1
IGBT Modules FS820R08A6P2LBBPSA1
Infineon
FS820R08A6P2LBBPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count33
AutomotiveYes
PCB changed33
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width142.5
Package Height32
Package Length154.5
Supplier PackageHYBRIDD-1
Maximum Power Dissipation (mW)714000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)750
Maximum Continuous Collector Current (A)450
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 750V 450A 714000mW Automotive 33-Pin HYBRIDD-1 Tray
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