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FZ1200R17KF6CB2NOSA1
FZ1200R17KF6CB2NOSA1
IGBT Modules FZ1200R17KF6CB2NOSA1
Infineon
FZ1200R17KF6CB2NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationQuade
Package Width130
Package Length140
Maximum Power Dissipation (mW)9600000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)1950
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.35
Description
Trans IGBT Module N-CH 650V 1.95KA 9600000mW 7-Pin Tray
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