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FZ2400R12HE4B9NPSA1
FZ2400R12HE4B9NPSA1
IGBT Modules FZ2400R12HE4B9NPSA1
Infineon
FZ2400R12HE4B9NPSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveNo
TechnologyTrench|Field Stop
PCB changed9
Part StatusObsolete
Channel TypeN
ConfigurationTriple
Package Width140
Package Length190
Supplier PackageIHMB190-2
Maximum Power Dissipation (mW)13500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)3560
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 3.56KA 13500000mW 9-Pin IHMB190-2 Tray
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