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IGBT Modules FZ2400R17KF6C_B2
Infineon
FZ2400R17KF6C_B2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
Pin Count9
AutomotiveNo
PCB changed9
Part StatusObsolete
Channel TypeN
ConfigurationTriple Common Emitter Common Gate
Package Width140
Package Height38
Package Length190
Supplier PackageIHM190-1
Standard Package NameIHM190
Maximum Power Dissipation (mW)19200000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)3800
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Module N-CH 1700V 3.8KA 19200000mW 9-Pin IHM190-1
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