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FZ3600R12KE3NOSA1
FZ3600R12KE3NOSA1
IGBT Modules FZ3600R12KE3NOSA1
Infineon
FZ3600R12KE3NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveNo
PCB changed9
Part StatusObsolete
Channel TypeN
ConfigurationTriple Common Emitter Common Gate
Package Width140
Package Height38
Package Length190
Supplier PackageIHM190-2
Maximum Power Dissipation (mW)15000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)4700
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 4.7KA 15000000mW 9-Pin IHM190-2 Tray
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