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IGBT Modules FZ3600R17HP4B2BOSA1
Infineon
FZ3600R17HP4B2BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveNo
PCB changed9
Part StatusUnconfirmed
Channel TypeN
ConfigurationTriple
Package Width140
Package Length190
Supplier PackageAG-IHMB190-2
Maximum Power Dissipation (mW)21000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)3600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Module N-CH 1700V 3.6KA 21000000mW 9-Pin AG-IHMB190-2 Tray
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