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IGBT Modules FZ600R12KE3B1HOSA1
Infineon
FZ600R12KE3B1HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)2800000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)900
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 900A 2800000mW
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