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FZ800R12KE3HOSA1
FZ800R12KE3HOSA1
IGBT Modules FZ800R12KE3HOSA1
Infineon
FZ800R12KE3HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveUnknown
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width61.4
Package Length106.4
Supplier Package62MM-2
Maximum Power Dissipation (mW)3550000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)800
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 800A 3550000mW Automotive 4-Pin 62MM-2 Tray
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