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FZ800R33KF2C
FZ800R33KF2C
IGBT Modules FZ800R33KF2C
Infineon
FZ800R33KF2C
--
Diodes, Transistors and Thyristors
IGBT Modules
FZ800R33KF2C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)3A228.c
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width130
Package Height38
Package Length140
Supplier PackageIHV130-3
Standard Package NameIHM
Maximum Power Dissipation (mW)9600
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)1300
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 3300V 1.3KA 9600mW 7-Pin IHV130-3 Tray
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