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FZ900R12KP4HOSA1
FZ900R12KP4HOSA1
IGBT Modules FZ900R12KP4HOSA1
Infineon
FZ900R12KP4HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width61.4
Package Height36.5
Package Length106.4
Supplier Package62MM-2
Maximum Power Dissipation (mW)4300000
Maximum Gate Emitter Voltage (V)±20
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)900
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 900A 4300000mW 4-Pin 62MM-2 Tray
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