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NXH25C120L2C2SG
NXH25C120L2C2SG
IGBT Modules NXH25C120L2C2SG
onsemi
NXH25C120L2C2SG
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count26
AutomotiveNo
PCB changed26
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width40.2
Package Height8
Package Length73.2
Supplier PackageDIP
Maximum Power Dissipation (mW)20(Typ)
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)25
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 25A 20mW 26-Pin DIP Tube
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