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IGBT Modules NXH80T120L3Q0S3G
onsemi
NXH80T120L3Q0S3G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Automotive | No |
| Technology | Field Stop|Trench |
| Part Status | Active |
| Channel Type | N |
| Configuration | Quad |
| Maximum Power Dissipation (mW) | 188000@T 1|188000@T 4|82000@T 2|82000@T 3 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 1200@T 1|1200@T 4|650@T 2|650@T 3 |
| Maximum Continuous Collector Current (A) | 75@T 1|75@T 4|50@T 2|50@T 3 |
| Maximum Gate Emitter Leakage Current (uA) | 300@T 1|300@T 4|0.5@T 2|0.5@T 3 |
| Typical Collector Emitter Saturation Voltage (V) | 1.7@T 1|1.7@T 4|1@T 2|1@T 3 |
| Description |
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