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VS-GB50TP120N
VS-GB50TP120N
IGBT Modules VS-GB50TP120N
Vishay
VS-GB50TP120N
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width34
Package Height29.5
Package Length94.1
Supplier PackageINT-A-PAK
Maximum Power Dissipation (mW)446000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.4
Description
Trans IGBT Module N-CH 1200V 100A 446000mW 7-Pin INT-A-PAK
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