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NCD57091ADWR2G
NCD57091ADWR2G
IGBT and MOSFET Gate Driver Photocouplers NCD57091ADWR2G
onsemi
NCD57091ADWR2G
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Optoelectronics
IGBT and MOSFET Gate Driver Photocouplers
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Package Width7.5
Package Height2.3
Package Length5.85
Supplier PackageSOIC W
Maximum Fall Time (ns)13(Typ)
Maximum Rise Time (ns)13(Typ)
Common Mode Voltage (V)1500
Number of Channels per Chip1
Maximum Power Dissipation (mW)1470
Maximum Peak Output Current (A)6.5
Minimum Peak Output Current (A)-6.5
Minimum Isolation Voltage (Vrms)5000
Maximum Operating Temperature (°C)125
Maximum Pulse Width Distortion (ns)25
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)20
Minimum Common Mode Rejection (kV/us)100(Max)
Maximum Working Insulation Voltage (Vp)1200
Maximum Propagation Delay Time (tPHL) (ns)90
Maximum Propagation Delay Time (tPLH) (ns)90
Description
Optocoupler Drive 1-CH 20V 1500V 8-Pin SOIC W T/R
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