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IGBT and MOSFET Gate Driver Photocouplers NCV57090EDWR2G
onsemi
NCV57090EDWR2G
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Optoelectronics
IGBT and MOSFET Gate Driver Photocouplers
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | Yes |
| Part Status | Active |
| Maximum Fall Time (ns) | 13(Typ) |
| Maximum Rise Time (ns) | 13(Typ) |
| Common Mode Voltage (V) | 1500 |
| Supplier Temperature Grade | Automotive |
| Number of Channels per Chip | 1 |
| Maximum Power Dissipation (mW) | 1470 |
| Maximum Peak Output Current (A) | 6.5 |
| Minimum Peak Output Current (A) | -6.5 |
| Minimum Isolation Voltage (Vrms) | 5000 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Pulse Width Distortion (ns) | 25 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 20 |
| Minimum Common Mode Rejection (kV/us) | 100(Max) |
| Maximum Working Insulation Voltage (Vp) | 1200 |
| Maximum Propagation Delay Time (tPHL) (ns) | 90 |
| Maximum Propagation Delay Time (tPLH) (ns) | 90 |
| Description |
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