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IGBT and MOSFET Gate Driver Photocouplers SI8275DBD-IM1
Silicon Labs
SI8275DBD-IM1
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Optoelectronics
IGBT and MOSFET Gate Driver Photocouplers
Specification
| Product Attribute | Attribute Value |
| HTS | 8542.39.00.01 |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 14 |
| Output Type | Pull-Up/Down |
| PCB changed | 14 |
| Part Status | Active |
| Package Width | 5 |
| Package Height | 0.85(Max) |
| Package Length | 5 |
| Supplier Package | DFN |
| Maximum Fall Time (ns) | 18 |
| Maximum Rise Time (ns) | 16 |
| Common Mode Voltage (V) | 1500 |
| Supplier Temperature Grade | Industrial |
| Number of Channels per Chip | 2 |
| Maximum Power Dissipation (mW) | 1200 |
| Maximum Peak Output Current (A) | 4 |
| Minimum Isolation Voltage (Vrms) | 2500 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Pulse Width Distortion (ns) | 8 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 5.5 |
| Minimum Common Mode Rejection (kV/us) | 200 |
| Maximum Working Insulation Voltage (Vp) | 630 |
| Maximum Propagation Delay Time (tPHL) (ns) | 75 |
| Maximum Propagation Delay Time (tPLH) (ns) | 75 |
| Description |
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