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IGLD60R070D1
IGLD60R070D1
JFETs IGLD60R070D1
Infineon
IGLD60R070D1
--
Diodes, Transistors and Thyristors
JFETs
IGLD60R070D1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialGaN
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel TypeN
ConfigurationSingle Quad Drain Dual Source
Package Width8
Package Height1.3(Max)
Package Length8
Supplier PackageLSON EP
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)114000
Maximum Gate Source Voltage (V)-10(Min)
Maximum Drain Source Voltage (V)600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (mA)15000
Description
Trans JFET N-CH 600V 15A GaN 8-Pin LSON EP T/R
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