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IGLD60R190D1AUMA1
IGLD60R190D1AUMA1
JFETs IGLD60R190D1AUMA1
Infineon
IGLD60R190D1AUMA1
--
Diodes, Transistors and Thyristors
JFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialGaN
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width8
Package Height1.3(Max)
Package Length8
Supplier PackageLSON EP
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)62500
Maximum Gate Source Voltage (V)-10(Min)
Maximum Drain Source Voltage (V)600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (mA)10000
Description
Trans JFET N-CH 600V 10A GaN 8-Pin LSON EP T/R
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