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IGT60R070D1ATMA1
IGT60R070D1ATMA1
JFETs IGT60R070D1ATMA1
Infineon
IGT60R070D1ATMA1
--
Diodes, Transistors and Thyristors
JFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialGaN
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel TypeN
ConfigurationSingle Hex Source
Package Width10.38
Package Height2.3
Package Length9.9
Supplier PackageHSOF
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)125000
Maximum Gate Source Voltage (V)-10(Min)
Maximum Drain Source Voltage (V)600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (mA)31000
Description
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
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