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MOSFETs 2N6770JANTX PX-SCN
Infineon
2N6770JANTX PX-SCN
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| SVHC | Yes |
| EU RoHS | Not Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 25 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 130(Max) |
| Typical Rise Time (ns) | 190(Max) |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 150000 |
| Typical Gate Charge @ 10V (nC) | 120(Max) |
| Typical Gate Charge @ Vgs (nC) | 120(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 35(Max) |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 170(Max) |
| Maximum Diode Forward Voltage (V) | 1.7 |
| Typical Gate to Drain Charge (nC) | 70(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 19(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Drain Source Resistance (mOhm) | 500@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 48 |
| Description |
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