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2N6786
2N6786
MOSFETs 2N6786
Infineon
2N6786
--
Diodes, Transistors and Thyristors
MOSFETs
2N6786.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSNot Compliant
Diameter9.22(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Height4.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Process TechnologyHEXFET
Standard Package NameTO-205-AF
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)30(Max)
Typical Rise Time (ns)20(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)15000
Typical Gate Charge @ 10V (nC)12(Max)
Typical Gate Charge @ Vgs (nC)12(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15(Max)
Maximum Drain Source Voltage (V)400
Typical Turn-Off Delay Time (ns)35(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.25
Typical Input Capacitance @ Vds (pF)170@25V
Maximum Drain Source Resistance (mOhm)3700@10V
Description
Trans MOSFET N-CH 400V 1.25A 3-Pin TO-39
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