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MOSFETs 2N6800U
Microchip Technology
2N6800U
--
Diodes, Transistors and Thyristors
MOSFETs
2N6800U.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count18
AutomotiveNo
PCB changed18
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Drain Octal Source Dual Gate
Package Width9.14(Max)
Package Height2.92(Max)
Package Length9.14(Max)
Product CategoryPower MOSFET
Supplier PackageLCC
Maximum IDSS (uA)25
Standard Package NameLCC
Typical Fall Time (ns)35(Max)
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Typical Gate Charge @ 10V (nC)34.75
Typical Gate Charge @ Vgs (nC)34.75@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)400
Typical Turn-Off Delay Time (ns)35
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Maximum Drain Source Resistance (MOhm)1100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 400V 3A 18-Pin LCC
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