Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 3 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 1.4(Max) |
Package Height | 1(Max) |
Package Length | 3(Max) |
Product Category | Power MOSFET |
Supplier Package | SOT-23 |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
Standard Package Name | SOT |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 830 |
Maximum Gate Source Voltage (V) | 30 |
Typical Output Capacitance (pF) | 6.8 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.85 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate Threshold Voltage (V) | 2 |
Typical Reverse Recovery Time (ns) | 30 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -65 |
Maximum Continuous Drain Current (A) | 0.3 |
Operating Junction Temperature (°C) | -65 to 150 |
Typical Input Capacitance @ Vds (pF) | 31@10V |
Typical Reverse Recovery Charge (nC) | 30 |
Maximum Drain Source Resistance (MOhm) | 5000@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 30 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 1.2 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 3.5@10V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 350 |
Description |