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MOSFETs 2N7002BKM/VYL
Nexperia
2N7002BKM/VYL
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| SVHC | Yes |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | LTB |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Small Signal |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 715 |
| Typical Gate Charge @ Vgs (nC) | 0.5@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.45 |
| Typical Input Capacitance @ Vds (pF) | 33@10V |
| Maximum Drain Source Resistance (MOhm) | 1600@10V |
| Description |
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