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2N7002E,215
2N7002E,215
MOSFETs 2N7002E,215
Nexperia
2N7002E,215
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Diodes, Transistors and Thyristors
MOSFETs
2N7002E,215.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Typical Gate Charge @ 10V (nC)0.69
Typical Gate Charge @ Vgs (nC)0.69@10V
Maximum Gate Source Voltage (V)±30
Maximum Drain Source Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.385
Typical Input Capacitance @ Vds (pF)31@10V
Maximum Drain Source Resistance (MOhm)3000@10V
Description
Trans MOSFET N-CH 60V 0.385A 3-Pin SOT-23 T/R
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