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2N7002ET7G
2N7002ET7G
MOSFETs 2N7002ET7G
onsemi
2N7002ET7G
--
Diodes, Transistors and Thyristors
MOSFETs
2N7002ET7G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)3.6
Typical Rise Time (ns)1.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)420
Typical Gate Charge @ Vgs (nC)0.81@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)1.7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)4.8
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.26
Typical Input Capacitance @ Vds (pF)26.7@25V
Maximum Drain Source Resistance (mOhm)2500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R
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