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2N7002K-E3
2N7002K-E3
MOSFETs 2N7002K-E3
Vishay
2N7002K-E3
--
Diodes, Transistors and Thyristors
MOSFETs
2N7002K-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTrenchFET
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Typical Gate Charge @ Vgs (nC)0.4@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)6
Typical Turn-On Delay Time (ns)25(Max)
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)35(Max)
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.3
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)30@25V
Maximum Drain Source Resistance (mOhm)2000@10V
Description
Trans MOSFET N-CH Si 60V 0.3A 3-Pin SOT-23
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