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2N7002LT1G
2N7002LT1G
MOSFETs 2N7002LT1G
onsemi
2N7002LT1G
--
Diodes, Transistors and Thyristors
MOSFETs
2N7002LT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)25(Max)
Typical Turn-On Delay Time (ns)20(Max)
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)40(Max)
Maximum Diode Forward Voltage (V)1.5
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.115
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (MOhm)7500@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.8
Maximum Power Dissipation on PCB @ TC=25°C (W)0.225
Typical Reverse Transfer Capacitance @ Vds (pF)5(Max)@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)556
Description
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
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