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2SJ613-TD-E
2SJ613-TD-E
MOSFETs 2SJ613-TD-E
onsemi
2SJ613-TD-E
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Diodes, Transistors and Thyristors
MOSFETs
2SJ613-TD-E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryPower MOSFET
Supplier PackageSOT-89
Maximum IDSS (uA)1
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)63
Typical Rise Time (ns)88
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)7.8@4V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)62
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)680@10V
Maximum Drain Source Resistance (mOhm)69@4V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH Si 20V 6A 4-Pin(3+Tab) SOT-89
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