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2SJ633-TL-E
2SJ633-TL-E
MOSFETs 2SJ633-TL-E
onsemi
2SJ633-TL-E
--
Diodes, Transistors and Thyristors
MOSFETs
2SJ633-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)41
Typical Rise Time (ns)45
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ 10V (nC)9
Typical Gate Charge @ Vgs (nC)9@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)33
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)365@20V
Maximum Drain Source Resistance (mOhm)365@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH Si 60V 4A
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