Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
ECCN (US) | EAR99 |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 41 |
Typical Rise Time (ns) | 45 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1000 |
Typical Gate Charge @ 10V (nC) | 9 |
Typical Gate Charge @ Vgs (nC) | 9@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 33 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4 |
Typical Input Capacitance @ Vds (pF) | 365@20V |
Maximum Drain Source Resistance (mOhm) | 365@10V |
Maximum Gate Source Leakage Current (nA) | 10000 |
Description |