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MOSFETs 2SK1920-K-TL-E
onsemi
2SK1920-K-TL-E
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| ECCN (US) | EAR99 |
| Automotive | No |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 55 |
| Typical Rise Time (ns) | 15 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4 |
| Typical Input Capacitance @ Vds (pF) | 420@20V |
| Maximum Drain Source Resistance (mOhm) | 700@10V |
| Description |
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