Product Attribute | Attribute Value |
EU RoHS | Supplier Unconfirmed |
Material | Si |
ECCN (US) | EAR99 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Drain |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 100 |
Typical Fall Time (ns) | 50 |
Typical Rise Time (ns) | 11 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1000 |
Typical Gate Charge @ 10V (nC) | 4 |
Typical Gate Charge @ Vgs (nC) | 4@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 600 |
Typical Turn-Off Delay Time (ns) | 16 |
Maximum Gate Threshold Voltage (V) | 3.5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 0.7 |
Typical Input Capacitance @ Vds (pF) | 96@20V |
Maximum Drain Source Resistance (MOhm) | 18500@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |