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2SK536-TB-E
2SK536-TB-E
MOSFETs 2SK536-TB-E
onsemi
2SK536-TB-E
--
Diodes, Transistors and Thyristors
MOSFETs
2SK536-TB-E.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.65(Max)
Package Height1.25(Max)
Package Length3.05(Max)
Product CategorySmall Signal
Supplier PackageSC-59
Maximum IDSS (uA)1
Standard Package NameSC
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)±12
Maximum Drain Source Voltage (V)50
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.1
Typical Input Capacitance @ Vds (pF)15@10V
Maximum Drain Source Resistance (MOhm)20000(Typ)@10V
Maximum Gate Source Leakage Current (nA)10
Description
Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R
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