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3LP01C-TB-H
3LP01C-TB-H
MOSFETs 3LP01C-TB-H
onsemi
3LP01C-TB-H
--
Diodes, Transistors and Thyristors
MOSFETs
3LP01C-TB-H.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.65(Max)
Package Height1.25(Max)
Package Length3.05(Max)
Product CategoryPower MOSFET
Supplier PackageSC-59
Maximum IDSS (uA)1
Standard Package NameSC
Typical Fall Time (ns)130
Typical Rise Time (ns)55
Number of Elements per Chip1
Maximum Power Dissipation (mW)250
Typical Gate Charge @ 10V (nC)1.43
Typical Gate Charge @ Vgs (nC)1.43@10V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)24
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)120
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.1
Typical Input Capacitance @ Vds (pF)7.5@10V
Maximum Drain Source Resistance (mOhm)10400@4V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH Si 30V 0.1A 3-Pin SC-59 T/R
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