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MOSFETs ADP360120W3
STMicroelectronics
ADP360120W3
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Diodes, Transistors and Thyristors
MOSFETs
ADP360120W3.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MaterialSiC
MountingScrew
ECCN (US)EAR99
Pin Count38
AutomotiveYes
PCB changed38
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationHex
Package Width126.5
Package Height32
Package Length154.5
Product CategoryPower MOSFET
Number of Elements per Chip6
Maximum Power Dissipation (mW)667000
Typical Gate Charge @ Vgs (nC)944@18V
Maximum Gate Source Voltage (V)22
Maximum Drain Source Voltage (V)1200
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)360
Operating Junction Temperature (°C)-40 to 175
Typical Input Capacitance @ Vds (pF)28070@800V
Maximum Drain Source Resistance (mOhm)3.45@18V
Description
Trans MOSFET N-CH SiC 1.2KV 360A Automotive 38-Pin
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